DocumentCode
1300673
Title
Monolithic integration of vertical-cavity laser diodes and resonant photodetectors with hybrid Si3N4-SiO2 top Bragg mirrors
Author
Maier, Thomas ; Strasser, G. ; Gornik, E.
Author_Institution
Inst. fur Festkorperelektron., Vienna, Austria
Volume
12
Issue
2
fYear
2000
Firstpage
119
Lastpage
121
Abstract
Top-emitting vertical-cavity surface-emitting lasers are monolithically integrated with resonance enhanced photodetectors (REPDs), utilizing dielectric Si/sub 3/N/sub 4/-SiO/sub 2/ top Bragg mirrors. High-efficiency (66%) REPDs with a narrow optical bandwidth of 1.25 nm were realized by adjusting the incoupling mirror´s reflectivity. High-finesse REPDs with low QW-absorption, have smaller efficiencies (/spl sim/10%), but extremely narrow optical bandwidths down to 0.196 nm. The high spectral resolution of these detectors leads to the appearance of higher-order transverse detector modes in the spectral response.
Keywords
distributed Bragg reflector lasers; integrated optoelectronics; laser mirrors; photodetectors; quantum well lasers; silicon compounds; surface emitting lasers; 10 percent; Si/sub 3/N/sub 4/-SiO/sub 2/; dielectric Si/sub 3/N/sub 4/-SiO/sub 2/ top Bragg mirrors; extremely narrow optical bandwidths; high spectral resolution; high-efficiency; higher-order transverse detector modes; hybrid Si/sub 3/N/sub 4/-SiO/sub 2/ top Bragg mirrors; incoupling mirror reflectivity; low QW-absorption; monolithic integration; narrow optical bandwidth; resonance enhanced photodetectors; resonant photodetectors; spectral response; top-emitting vertical-cavity surface-emitting lasers; vertical-cavity laser diodes; Bandwidth; Detectors; Dielectrics; Diode lasers; Mirrors; Monolithic integrated circuits; Photodetectors; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.823489
Filename
823489
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