Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

Author

Gokhale, M.R. ; Studenkov, P.V. ; Wei, J. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

12

Issue

2

fYear

2000

Firstpage

131

Lastpage

133

Abstract

We demonstrate high-performance Al-free InGaAsN-GaAs-InGaP-based long-wavelength quantum-well (QW) lasers grown on GaAs substrates by gas-source molecular beam epitaxy using a RF plasma nitrogen source. Continuous wave (CW) operation of InGaAsN-GaAs QW lasers is demonstrated at /spl lambda/=1.3 μm at a threshold current density of only J/sub TH/=1.32 kA/cm². These narrow ridge (W=8.5 μm) lasers also exhibit an internal loss of only 3.1 cm/sup -1/ and an internal efficiency of 60%. Also, a characteristic temperature of T₀=150 K from 10/spl deg/C to 60/spl deg/C was measured, representing a significant improvement over conventional /spl lambda/=1.3 μm InGaAsP-InP lasers. Under pulsed operation, a record high maximum operating temperature of 125/spl deg/C and output powers greater than 300 mW (pulsed) and 120 mW (CW) were also achieved.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; optical losses; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 mum; 10 to 60 C; 120 mW; 125 C; 150 K; 300 mW; 60 percent; CW operation; GaAs; GaAs substrates; InGaAsN-GaAs; InGaAsN-GaAs QW lasers; InGaAsN-GaAs-InGaP; InGaAsN-GaAs-InGaP-based quantum-well lasers; InGaAsN-based quantum-well lasers; InGaAsP-InP lasers; N/sub 2/; RF plasma N/sub 2/ source; characteristic temperature; continuous wave operation; gas-source molecular beam epitaxy; high-performance lasers; internal efficiency; internal loss; long-wavelength quantum-well lasers; maximum operating temperature; narrow ridge lasers; output powers; pulsed operation; threshold current density; Gallium arsenide; Gas lasers; Molecular beam epitaxial growth; Plasma density; Plasma sources; Plasma temperature; Plasma waves; Quantum well lasers; Radio frequency; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.823493

Filename

823493