Title :
Asymmetric gain induced by longitudinal spatial carrier burning in semiconductor lasers
Author :
Huang, Yong-Zhen
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fDate :
6/7/1990 12:00:00 AM
Abstract :
Nonlinear gain caused by dielectric corrugation resulting from the cavity standing wave of a lasing mode in semiconductor lasers is investigated using the perturbation approach. The results show that the nonlinear gain spectrum is asymmetric when the linewidth enhancement factor alpha not=0, and the possibility of single mode operation is greater at alpha =0.
Keywords :
laser cavity resonators; laser modes; laser theory; optical hole burning; semiconductor junction lasers; asymmetric gain; cavity standing wave; dielectric corrugation; lasing mode; linewidth enhancement factor; longitudinal spatial carrier burning; nonlinear gain spectrum; perturbation approach; semiconductor lasers; single mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900511
