Title :
Low-threshold InGaAsP ring lasers fabricated using bi-level dry etching
Author :
Griffel, G. ; Abeles, J.H. ; Menna, R.J. ; Braun, A.M. ; Connolly, J.C. ; King, M.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
Abstract :
We report a novel bi-level etching technique that permits the use of standard photolithography for coupling to deeply etched ring resonator structures. The technique is employed to demonstrate InGaAsP laterally coupled racetrack ring resonators laser with record low threshold currents of 66 mA. The racetrack laser have curved sections of 150-μm radius with negligible bending loss. The lasers operate continuous-wave single mode up to nearly twice threshold with a 26-dB side-mode-suppression ratio. Bi-level etching is of interest for fabrication of mesoscopic or microcavity photonic resonator structures without relying on submicrometer processing.
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser modes; optical couplers; optical fabrication; optical losses; photolithography; ring lasers; semiconductor lasers; waveguide lasers; 150 mum; 66 mA; InGaAsP; InGaAsP laterally coupled racetrack ring resonator laser; InGaAsP ring lasers; bending loss; bi-level dry etching; bi-level etching; bi-level etching technique; continuous-wave single mode laser; coupling; curved sections; deeply etched ring resonator structures; fabrication; low threshold currents; low-threshold ring lasers; mesoscopic photonic resonator structures; microcavity photonic resonator structures; racetrack laser; side-mode-suppression ratio; standard photolithography; submicrometer processing; Etching; Laser modes; Lithography; Microcavities; Optical coupling; Optical device fabrication; Optical losses; Optical ring resonators; Ring lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
