DocumentCode
1300753
Title
Heavy metal gettering in buried nitride silicon-on-insulator structures
Author
Skorupa, Wolfgang ; Groetzschel, R.
Author_Institution
Central Inst. for Nucl. Res., Rossendorf, Dresden
Volume
24
Issue
8
fYear
1988
fDate
4/14/1988 12:00:00 AM
Firstpage
464
Lastpage
465
Abstract
Using Rutherford backscattering spectrometry the redistribution and gettering of implanted gold was investigated in silicon-on-insulator structures produced by high-dose nitrogen implantation. The gettering efficiency of a structure annealed at 1000°C containing a highly damaged silicon region near to the buried compound layer is more pronounced than that of a 1200°C-annealed structure with a lightly damaged silicon top layer. Gettering takes place at the interregion between silicon and silicon nitride
Keywords
elemental semiconductors; getters; gold; ion implantation; semiconductor technology; silicon; Au gettering; Au ion implantation; Au redistribution; N ion implantation; RBS; Rutherford backscattering spectrometry; SOI; Si:Au-Si3N4; buried nitride; gettering efficiency; heavy metal gettering; silicon-on-insulator structures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8235
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