DocumentCode :
1300808
Title :
Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor
Author :
Liwei Shang ; Zhuoyu Ji ; Hong Wang ; Yinping Chen ; Xing Liu ; Maixin Han ; Ming Liu
Author_Institution :
Key Lab. of Nanofabrication & Novel Devices Integration Technol., Chinese Acad. of Sci., Beijing, China
Volume :
32
Issue :
10
fYear :
2011
Firstpage :
1451
Lastpage :
1453
Abstract :
A low-voltage multilevel organic thin-film memory device is proposed and demonstrated for nonvolatile data storage. Charge carrier density in the storage field was tuned up to four discrete levels in pentacene organic thin-film transistor with poly(methyl methacrylate)-modified Al2O3 film as the dielectric layer through light-assisted program procedures. Charges can be stored over 1 × 104 s at room temperature. The states can be clearly distinguished after 1 × 104 write-read cycles.
Keywords :
dielectric materials; low-power electronics; organic semiconductors; random-access storage; thin film transistors; charge carrier density; dielectric layer; low-voltage multilevel organic thin-film memory device; nonvolatile data storage; pentacene organic thin-film transistor; poly(methyl methacrylate); storage field; Logic gates; Organic thin film transistors; Stress; Temperature measurement; Threshold voltage; Aluminum oxide; low voltage; multibit memory; organic thin-film transistor (OTFT); threshold voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2162218
Filename :
5989841
Link To Document :
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