DocumentCode :
1301231
Title :
Research on the Temperature and Its Duration of Semiconductor-Bridge Plasma
Author :
Feng, Hongyan ; Zhang, Lin ; Zhu, Shunguan ; Wu, Rong ; Li, Yan ; Shen, Ruiqi
Author_Institution :
Sch. of Chem. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
Volume :
37
Issue :
9
fYear :
2009
Firstpage :
1830
Lastpage :
1835
Abstract :
The characteristics of semiconductor-bridge (SCB) plasma in the air have been studied. Based on the double line of atomic emission spectroscopy principle, a system for the research of SCB plasma is designed and developed. With this technique, SCB plasma temperature is diagnosed, and the standard deviation is less than 9%. Moreover, plasma temperature distribution Vs time is acquired, and the temporal resolution is 0.1 mus. In addition, voltage and current signal above the SCB during the fire shot are monitored. These results indicate that the duration of SCB plasma is about 100 ms and the temperature changes dramatically in the air. The relation among plasma late time discharge, excitation energy, and plasma temperature is considered. Bridge shape and firing circuit also affect the plasma duration and plasma temperature.
Keywords :
discharges (electric); explosions; plasma devices; plasma diagnostics; plasma temperature; atomic emission spectroscopy; excitation energy; explosive; firing circuit; plasma diagnosis; plasma duration; plasma late time discharge; plasma temperature distribution; semiconductor-bridge plasma; Atomic emission spectroscopy; duration; plasma temperature; semiconductor-bridge (SCB) ignition;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/TPS.2009.2025502
Filename :
5208247
Link To Document :
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