• DocumentCode
    1301231
  • Title

    Research on the Temperature and Its Duration of Semiconductor-Bridge Plasma

  • Author

    Feng, Hongyan ; Zhang, Lin ; Zhu, Shunguan ; Wu, Rong ; Li, Yan ; Shen, Ruiqi

  • Author_Institution
    Sch. of Chem. Eng., Nanjing Univ. of Sci. & Technol., Nanjing, China
  • Volume
    37
  • Issue
    9
  • fYear
    2009
  • Firstpage
    1830
  • Lastpage
    1835
  • Abstract
    The characteristics of semiconductor-bridge (SCB) plasma in the air have been studied. Based on the double line of atomic emission spectroscopy principle, a system for the research of SCB plasma is designed and developed. With this technique, SCB plasma temperature is diagnosed, and the standard deviation is less than 9%. Moreover, plasma temperature distribution Vs time is acquired, and the temporal resolution is 0.1 mus. In addition, voltage and current signal above the SCB during the fire shot are monitored. These results indicate that the duration of SCB plasma is about 100 ms and the temperature changes dramatically in the air. The relation among plasma late time discharge, excitation energy, and plasma temperature is considered. Bridge shape and firing circuit also affect the plasma duration and plasma temperature.
  • Keywords
    discharges (electric); explosions; plasma devices; plasma diagnostics; plasma temperature; atomic emission spectroscopy; excitation energy; explosive; firing circuit; plasma diagnosis; plasma duration; plasma late time discharge; plasma temperature distribution; semiconductor-bridge plasma; Atomic emission spectroscopy; duration; plasma temperature; semiconductor-bridge (SCB) ignition;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.2009.2025502
  • Filename
    5208247