Physics-Based SPICE-Model for IGBTs With Transparent Emitter

The insulated gate bipolar transistor (IGBT) is still the most used power semiconductor device for applications at medium power and frequency ranges, due to its good compromise between on-state loss, switching loss, and ease of control. IGBT models should consider the different available fabrication technologies aimed to optimize the device behavior for particular applications. Physics-based models of power electronic devices are the most accurate for circuit simulation purposes, since they can take into account device structure and the most important semiconductor phenomena. Moreover, they can give an insight into internal device behavior. However, such models are often too complex to be implemented in circuit simulators like the simulation program with integrated circuit emphasis (SPICE) family. This paper presents a physics-based IGBT model implemented in PSpice, which considers a structure with transparent emitter and can be applied to homogeneous structures with or without a field-stop layer.