0.15 μm passivated InP-based HEMT MMIC technology with high thermal stability in hydrogen ambient

Author

Chertouk, M. ; Dammann, M. ; Köhler, K. ; Weimann, G.

Author_Institution

Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany

Volume

21

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

97

Lastpage

99

Abstract

The effect of thermal stress on InP-based HEMT MMIC with Ti-Pt-Au gate metallization in N/sub 2/ and H/sub 2/ forming gas is reported. The importance of stabilization bake at high temperature under nitrogen to stabilize the threshold voltage and device parameters is demonstrated. In addition, through thermal stress at 270/spl deg/C with hydrogen ambient, we found, that our InP based HEMT devices and MMICs with Ti-Pt-Au gate metallization are not sensitive to hydrogen. To our knowledge, this is the first demonstration of hydrogen insensitive FET´s and MMIC´s with Ti-Pt-Au gate metallization.

Keywords

HEMT integrated circuits; III-V semiconductors; circuit stability; field effect MMIC; indium compounds; integrated circuit metallisation; integrated circuit reliability; thermal stability; thermal stresses; 0.15 micron; 270 degC; H/sub 2/; HEMT MMIC technology; InP; N/sub 2/; TiPtAu; device parameters; forming gas; gate metallization; hydrogen insensitive FET; stabilization bake; thermal stability; thermal stress; threshold voltage; FETs; HEMTs; Hydrogen; Indium phosphide; MMICs; Metallization; Nitrogen; Temperature sensors; Thermal stresses; Threshold voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.823568

Filename

823568