Voltage dependence of self-clamped inductive switching (SCIS) energy capability of IGBTs

Author

Shen, Z. John ; Briggs, Dave ; Robb, Stephen P.

Author_Institution

Dept. of Electr. & Comput. Eng., Michigan Univ., Dearborn, MI, USA

Volume

21

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

119

Lastpage

122

Abstract

Self-clamped inductive switching (SCIS) energy capability is the most important device parameter for insulated gate bipolar transistors (IGBTs) used in automotive ignition applications. We have experimentally characterized the dependence of IGBTs SCIS energy capability on the clamp voltage for an ambient temperature range of -50 to 175/spl deg/C. It is found that the SCIS energy of an IGBT increases by nearly 70% when the clamp voltage is reduced from 400 to 100 V. Such a significant increase is attributed to the lower maximum junction temperature that is reached in an IGBT with a lower clamp voltage during the SCIS testing. Two-dimensional (2-D) electrothermal device simulations have been performed to analyze such phenomena. The results provide critical information for device design and product development.

Keywords

automotive electronics; electric ignition; insulated gate bipolar transistors; power semiconductor switches; semiconductor device models; -50 to 175 degC; 2D electrothermal device simulations; 400 to 100 V; IGBTs; ambient temperature range; automotive ignition applications; clamp voltage; device design; device parameter; energy capability; maximum junction temperature; product development; self-clamped inductive switching; voltage dependence; Automotive engineering; Clamps; Electrothermal effects; Ignition; Insulated gate bipolar transistors; Temperature dependence; Temperature distribution; Testing; Two dimensional displays; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.823575

Filename

823575