Title :
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure
Author :
Yue, Jeffrey MunPun ; Chim, Wai Kin ; Cho, Byung Jin ; Chan, Daniel SiuHung ; Qin, Wei Han ; Kim, Young-Bog ; Jang, Se-Aug ; Yeo, In-Seok
Author_Institution :
Fac. of Eng., Nat. Univ. of Singapore, Singapore
fDate :
3/1/2000 12:00:00 AM
Abstract :
Narrow-channel n-MOSFETs with recessed LOCOS (R-LOCOS) isolation structure exhibit less hot carrier-induced degradation than wide-channel n-MOSFETs, but the degradation mechanism of both devices is the same. This new finding Is explained by the fact that in deep submicron MOSFETs with ultra-thin gate oxide, the dominant factor deciding the degradation behavior in narrow- and wide-channel devices is the vertical electric field effect rather than the mechanical stress effect.
Keywords :
MOSFET; hot carriers; isolation technology; semiconductor device measurement; semiconductor device reliability; R-LOCOS; deep submicron MOSFETs; degradation behavior; hot-carrier degradation mechanism; narrow-channel n-MOSFETs; recessed LOCOS isolation structure; vertical electric field effect; wide-channel n-MOSFETs; CMOS technology; Degradation; Electrodes; Hot carrier effects; Hot carriers; MOSFET circuits; Oxidation; Silicon; Stress; Voltage;
Journal_Title :
Electron Device Letters, IEEE
