Title :
High-speed operation of 1.5 μm GaInAsP/InP optoelectronic integrated laser drivers
Author :
Suzuki, Nobuhiro ; Furuyama, H. ; Hirayama, Yuzo ; Morinaga, M. ; Eguchi, Kiyoshi ; Kushibe, M. ; Funamizu, M. ; Nakamura, Mitsutoshi
Author_Institution :
Toshiba Res. & Dev. Centre, Kawasaki
fDate :
4/14/1988 12:00:00 AM
Abstract :
A 1.5 μm-wavelength high-speed self-aligned constricted-mesa laser diode and an InP MESFET have been integrated monolithically without deterioration in the performance of either device, by using a gate projection process. A broad 3 dB bandwidth of 6.6 GHz was demonstrated for the first time
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; semiconductor junction lasers; 1.5 micron; 6.6 GHz; GaInAsP-InP laser drivers; InP MESFET; InP transistor; OEIC; gate projection process; high-speed self-aligned constricted-mesa laser diode; integrated monolithically; optoelectronic integrated laser drivers;
Journal_Title :
Electronics Letters
