DocumentCode
1301316
Title
High-speed operation of 1.5 μm GaInAsP/InP optoelectronic integrated laser drivers
Author
Suzuki, Nobuhiro ; Furuyama, H. ; Hirayama, Yuzo ; Morinaga, M. ; Eguchi, Kiyoshi ; Kushibe, M. ; Funamizu, M. ; Nakamura, Mitsutoshi
Author_Institution
Toshiba Res. & Dev. Centre, Kawasaki
Volume
24
Issue
8
fYear
1988
fDate
4/14/1988 12:00:00 AM
Firstpage
467
Lastpage
468
Abstract
A 1.5 μm-wavelength high-speed self-aligned constricted-mesa laser diode and an InP MESFET have been integrated monolithically without deterioration in the performance of either device, by using a gate projection process. A broad 3 dB bandwidth of 6.6 GHz was demonstrated for the first time
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; semiconductor junction lasers; 1.5 micron; 6.6 GHz; GaInAsP-InP laser drivers; InP MESFET; InP transistor; OEIC; gate projection process; high-speed self-aligned constricted-mesa laser diode; integrated monolithically; optoelectronic integrated laser drivers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8237
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