DocumentCode :
1301367
Title :
Analysis of Class DE Amplifier With Nonlinear Shunt Capacitances at Any Grading Coefficient for High 
and 25  amplifier with nonlinear shunt capacitances at any grading coefficient <i>m</i> of the MOSFET body junction diode at a high value of the loaded quality factor <i>Q</i> of the output resonant circuit, zero equivalent series resistance of all the components, and switch-on duty ratio <i>D</i>=0.25. No external shunt capacitance is used in the analysis of the class DE amplifier. The grading coefficient determines the degree of nonlinearity of the MOSFET shunt capacitances. When the grading coefficient is different from the design specifications, the waveforms of the switch voltages do not satisfy the class E switching conditions, reducing the power conversion efficiency. Therefore, the grading coefficient <i>m</i> is an important parameter to satisfy the class E switching conditions. It is shown analytically that the dc supply voltage and current are always proportional to the amplitude of the output voltage and current. The output power capability is never affected by any nonlinearity of the shunt capacitances. We obtain analytical design equations, which are validated by PSPICE simulations and laboratory experiments considered with the gate-drain capacitance effect.</div>
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<div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>DC amplifiers; MOSFET; Q-factor; SPICE; capacitance; circuit simulation; electric breakdown; power amplifiers; MOSFET body junction diode; MOSFET shunt capacitance; PSPICE simulation; class DE amplifier; current; dc supply voltage; design specification; disruptive effect amplifier; gate-drain capacitance effect; grading coefficient; nonlinear shunt capacitance; output power capability; output resonant circuit; output voltage; power amplifier; quality factor; switch-on duty ratio; switching condition; zero equivalent series resistance; Class disruptive effect (DE) power amplifier; MOSFET gate-drain capacitance; RF power amplifier; class E zero-voltage switching (ZVS)/zero-derivative switching (ZDS); grading coefficient of junction capacitance; high <formula formulatype=)
$displaystyle Q$ ; nonlinear MOSFET drain-source parasitic capacitance;
fLanguage :
English
Journal_Title :
Power Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0885-8993
Type :
jour
DOI :
10.1109/TPEL.2009.2030503
Filename :
5208268
Link To Document :
