DocumentCode :
1301380
Title :
The push toward low voltage devices
Author :
Golio, Mike
Author_Institution :
Rockwell Collins, Cedar Rapids, IA, USA
Volume :
1
Issue :
1
fYear :
2000
fDate :
3/1/2000 12:00:00 AM
Firstpage :
38
Lastpage :
45
Abstract :
Since the early 1980s, increasing attention has been focused on the development and manufacture of low voltage and low power electronics. The motivation for this trend is multifaceted. For RF and microwave circuitry, the constraints implied by the low voltage imperative can be examined as they apply to every aspect of RF/microwave component development. The ultimate success of a low voltage and low power RF product strategy is affected by all of the following issues: materials technology (GaAs, Si, epitaxy, implant, heterojunctions); device technology (BJT, HBT, MESFET, MOSFET, HEMT); circuit technology (topology challenges for low voltage); and radio system design issues (architecture trends and low voltage). Of these factors, system architecture has the greatest potential impact
Keywords :
MMIC; integrated circuit design; integrated circuit technology; low-power electronics; GaAs; RF circuitry; Si; circuit technology; device technology; low power electronics; low voltage devices; materials technology; microwave circuitry; radio system design issues; system architecture; Epitaxial growth; Gallium arsenide; Implants; Low power electronics; Low voltage; Manufacturing; Materials science and technology; Microwave circuits; Microwave devices; Radio frequency;
fLanguage :
English
Journal_Title :
Microwave Magazine, IEEE
Publisher :
ieee
ISSN :
1527-3342
Type :
jour
DOI :
10.1109/6668.823826
Filename :
823826
Link To Document :
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