Two-dimensional simulation of orientation effects in self-aligned GaAs MESFETs

Author

Lo, Shih-Hsien ; Lee, Chien-Ping

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsin Chu, Taiwan

Volume

37

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

2130

Lastpage

2140

Abstract

The stress-induced orientation effects in self-aligned GaAs MESFETs were studied using a two-dimensional analysis. Devices oriented along different crystal directions, with different gate lengths, and under different stress conditions were studied. It was found that the piezoelectric effect caused by the surface stress plays a very important role in the device characteristics of short-channel self-aligned MESFETs. Structure parameters such as lateral spreading of N⁺ ions and p-type impurity concentration in the substrate were found to have great influence on the short-channel effect as well as the orientation effect. The short-channel effects can be suppressed and the device performance improved if the devices are oriented in the right direction and the structure of the devices and the thickness of the surface dielectric layer are properly chosen

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs:N; device characteristics; device orientation; device performance; lateral spreading of N⁺ ions; p-type impurity concentration; piezoelectric effect; semiconductors; short channel effects suppression; short-channel effects; short-channel self-aligned MESFETs; stress-induced orientation effects; surface dielectric layer thickness; surface stress; two-dimensional analysis; Dielectric substrates; Electron mobility; FETs; Gallium arsenide; Implants; Impurities; MESFETs; Piezoelectric effect; Stress; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.59901

Filename

59901