Title :
Ga0.51In0.49P/GaAs HEMT´s exhibiting good electrical performance at cryogenic temperatures
Author :
Chan, Yi-Jen ; Pavlidis, Dimitris ; Razeghi, Manijeh ; Omnes, Frank
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
10/1/1990 12:00:00 AM
Abstract :
The DC and microwave characteristics of Ga0.51In0.49P/GaAs HEMTs grown by metalorganic chemical vapor deposition (MOCVD) are presented. Devices with 1-μm-long gates show transconductances of 163 and 213 mS/mm at 300 and 77 K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer are evaluated at low temperature by the threshold voltage shift and current collapse phenomena. GaInP/GaAs HEMTs show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAs and InAlAs/InGaAs where the corresponding values are 0.5 and 0.25 V, respectively
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 17.8 GHz; 300 K; 77 K; DC characteristics; Ga0.51In0.49P-GaAs; MOCVD; cryogenic temperatures; current collapse phenomena; deep traps; electrical performance; maximum cutoff frequency; metalorganic chemical vapor deposition; microwave characteristics; semiconductors; threshold voltage shift; transconductances; Chemical vapor deposition; Cutoff frequency; Gallium arsenide; HEMTs; Indium compounds; MOCVD; MODFETs; Microwave devices; Temperature; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
