Title :
A CMOS-Microfluidic Chemiluminescence Contact Imaging Microsystem
Author :
Singh, Ritu Raj ; Leng, Lian ; Guenther, Axel ; Genov, Roman
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas at Austin, Austin, TX, USA
Abstract :
A hybrid CMOS-microfluidic microsystem for chemiluminescence and electrochemiluminescence-based biochemical sensing is presented. The microsystem integrates a two-layer soft polymer microfluidic network and a CMOS imager fabricated in a standard 0.35-μm technology. The CMOS imager consists of a 64 × 128-pixel array interdigitated with a 32 × 64 electrolessly plated nickel-gold microelectrode array. A two-transistor reset path technique attenuates the subthreshold leakage current of the reset transistor which constitutes a significant portion of the dark current. An active reset technique, in-pixel flicker noise cancellation, and pixel binning contribute to noise reduction. The imager achieves a low dark current of 3.6 nA/cm2 for photodiode reset voltages as high as 2.3 V, noise of 110 μVrms with maximum time of photon integration of 90 s, and a dynamic range of 67.8 dB. The CMOS-microfluidic microsystem is validated in on-chip chemiluminescence and electrochemiluminescence detection of luminol.
Keywords :
CMOS image sensors; biochemistry; biosensors; chemiluminescence; dark conductivity; electrochemical sensors; electroplating; gold; leakage currents; microelectrodes; microfluidics; nickel; photodiodes; CMOS microfluidic chemiluminescence contact imaging microsystem; active reset technique; biochemical sensing; dark current; electrochemiluminescence detection; electrolessly plated nickel gold microelectrode array; in-pixel flicker noise cancellation; luminol; noise reduction; on-chip chemiluminescence; photodiode reset voltage; picture size 128 pixel; picture size 64 pixel; pixel binning; reset transistor; size 0.35 mum; subthreshold leakage current; time 90 s; two layer soft polymer microfluidic network; two transistor reset path technique; voltage 2.3 V; CMOS integrated circuits; Dark current; Imaging; Noise; Photodiodes; Transistors; Active-reset technique; CMOS image sensor; chemiluminescence (CL); contact imaging; dark current; electrochemiluminescence (ECL); electroless nickel-gold plating; in-pixel flicker noise cancellation; microfluidics; subthreshold leakage; two-transistor reset path;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2012.2214182