Title :
Three-dimensional topography simulation model: etching and lithography
Author :
Fujinaga, Masato ; Kotani, Norihiko ; Kunikiyo, Tatsuya ; Oda, Hidekazu ; Shirahata, Masayoshi ; Akasaka, Y.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
10/1/1990 12:00:00 AM
Abstract :
An etching model in which topography is derived by solving a modified diffusion equation is introduced. This model is simple and makes it possible to simulate three-dimensional (3-D) topography accurately and quickly. Based on this model, a 3-D topography simulator which can be applied in the development of photolithography and isotropic/anisotropic etching has been developed. With this simulator, it is possible to simulate the series processes and multilayer etching, such as contact hole and trench etching. By simulating photolithography, diffraction and standing-wave effects can be found clearly in the 3-D topography of the developed photoresist. In the case of an etching process which is restricted by diffusion, the dependence of the etch front topography on the window width of the mask is examined
Keywords :
VLSI; digital simulation; electronic engineering computing; etching; integrated circuit technology; photolithography; 3-D topography; 3D topography simulation model; anisotropic etching; contact hole etching; developed photoresist; development of photolithography; diffraction effects; diffusion limited etching; etch front topography; etching model; isotropic etching; mask window width effects; modified diffusion equation; multilayer etching; series processes; standing-wave effects; trench etching; Anisotropic magnetoresistance; Chemicals; Computational modeling; Diffraction; Equations; Etching; Lithography; Resists; Surface topography; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
