A complementary heterostructure field effect transistor technology based on InAs/AlSb/GaSb

Author

Longenbach, K.F. ; Beresford, R. ; Wang, W.I.

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

37

Issue

10

fYear

1990

fDate

10/1/1990 12:00:00 AM

Firstpage

2265

Lastpage

2267

Abstract

A complementary heterojunction field effect transistor technology based on the InAs/AlSb/GaSb system is proposed. The structure is formed by the vertical integration of InAs n-channel and GaSb p-channel HFET devices. The superior transport properties of electrons in InAs and holes in GaSb and their band offsets to AlSb or AlSbAs yield devices with transconductances much greater than AlGaAs/GaAs n- and p-channel HFETs. It is shown that a complementary circuit fabricated from these devices could provide room-temperature performance up to six times greater than that predicted for AlGaAs/GaAs complementary circuits

Keywords

III-V semiconductors; aluminium compounds; field effect integrated circuits; field effect transistors; gallium compounds; indium compounds; C-HFETs; GaSb p-channel; InAs n-channel; InAs-AlSb-GaSb; band offsets; complementary HFETs; complementary circuit; complementary heterostructure field effect transistor; n-channel HFETs; p-channel HFETs; room-temperature performance; semiconductors; transconductances; transport properties of electrons in InAs; transport properties of holes in GaSb; vertical integration; Electron mobility; FETs; Gallium arsenide; HEMTs; Heterojunctions; Logic circuits; Logic devices; MODFET circuits; Threshold voltage; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.59918

Filename

59918