• DocumentCode
    1301793
  • Title

    A Ku-band Dual-SPDT RF-MEMS Switch by Double-Side SOI Bulk Micromachining

  • Author

    Yamane, Daisuke ; Sun, Wen ; Seita, Harunobu ; Kawasaki, S. ; Fujita, Hideaki ; Toshiyoshi, Hiroshi

  • Author_Institution
    Res. Center for Adv. Sci. & Technol., Univ. of Tokyo, Tokyo, Japan
  • Volume
    20
  • Issue
    5
  • fYear
    2011
  • Firstpage
    1211
  • Lastpage
    1221
  • Abstract
    This paper presents the design, fabrication method, and measurement results of a low-loss ohmic-contact radio-frequency microelectromechanical systems (MEMS) switch. A novel bidirectional electrostatic actuation mechanism has been developed for a dual single-pole double-throw switch that could be used for an X-Ku-band low-temperature cofired ceramic switched-line-type phase shifter. A high-aspect-ratio deep reactive-ion etching process and a thick gold-plating process were used to develop low-insertion-loss air-suspended MEMS waveguides and low resistive ohmic contacts. A typical insertion loss of 0.56 dB, a return loss of 19.4 dB, and an isolation of 51.4 dB were obtained at a Ku-band frequency of 12 GHz.
  • Keywords
    electrostatic actuators; elemental semiconductors; micromachining; microswitches; microwave phase shifters; microwave switches; ohmic contacts; silicon; silicon-on-insulator; sputter etching; waveguides; Ku-band dual-SPDT RF-MEMS switch; Si; X-Ku-band low-temperature coflred ceramic switched-line-type phase shifter; bidirectional electrostatic actuation mechanism; double-side SOI bulk micromachining; dual single-pole double-throw switch; frequency 12 GHz; high-aspect-ratio deep reactive-ion etching process; loss 0.56 dB; loss 19.4 dB; loss 51.4 dB; low resistive ohmic contact; low-insertion-loss air-suspended MEMS waveguide; low-loss ohmic-contact radiofrequency MEMS switch; low-loss ohmic-contact radiofrequency microelectromechanical system switch; thick gold-plating process; Actuators; Electromagnetic waveguides; Electrostatics; Insertion loss; Radio frequency; Switches; Switching circuits; Bulk micromachining; X–Ku-band; deep reactive-ion etching (DRIE); dual single-pole double-throw (dual-SPDT); gold electroplating; ohmic contact; radio-frequency microelectromechanical systems (RF-MEMS) switch;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2011.2162490
  • Filename
    5991906