Resistive-Switching Characteristics of $\hbox {Al}/ \hbox {Pr}_{0.7}\hbox {Ca}_{0.3}\hbox {MnO}_{3}$ for Nonvolatile Memory Applications

A systematic study on the switching mechanism of an Al/ Pr_0.7Ca_0.3MnO₃ (PCMO) device was performed. A polycrystalline PCMO film was deposited using a conventional sputtering method. A thin Al layer was introduced to induce a reaction with the PCMO, forming aluminum oxide (AlOx). Transmission electron microscopy analysis of the interface between Al and PCMO showed that resistive switching was governed by the formation and dissolution of AlOx. Some basic memory characteristics, such as good cycle endurance and data retention of up to 10⁴ s at 125??C, were also obtained. It also showed excellent switching uniformity and high device yield.