• DocumentCode
    1301992
  • Title

    Cross-Coupling Low-Triggering Dual-Polarity CLTdSCR ESD Protection in CMOS

  • Author

    Wang, X. ; Liu, J. ; Fan, S. ; Lin, L. ; Tang, H. ; Wang, A. ; Chen, H. ; Yang, L. ; Zhao, B.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of California Riverside, Riverside, CA, USA
  • Volume
    31
  • Issue
    10
  • fYear
    2010
  • Firstpage
    1143
  • Lastpage
    1145
  • Abstract
    This letter reports a novel ultrafast cross-coupling low-triggering dual-polarity SCR (CLTdSCR) ESD protection network in a CMOS. The measurement shows ultralow and tunable triggering voltage Vt1 ~ 3.83 V, low discharging resistance Rοn 0.26 Ω, low leakage Ileak ~ 0.36 nA, low noise figure NF ~ 0.2 dB, low parasitic capacitance CESD ~ 150 fF, and fast effective response t1 ~ 100 ps. It achieves a very high ~7 V/μm2 ESD protection level.
  • Keywords
    CMOS integrated circuits; electrostatic discharge; thyristors; CMOS; cross-coupling low-triggering dual-polarity silicon-controlled rectifier ESD protection network; CMOS integrated circuits; Electrostatic discharge; Integrated circuit modeling; Logic gates; Radio frequency; Testing; Thyristors; Electrostatic discharge (ESD) protection; RF; low triggering; silicon-controlled rectifier (SCR);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2058842
  • Filename
    5555936
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1301992