• DocumentCode
    1302027
  • Title

    Multilayer n-Type Organic Metal-Base Transistor

  • Author

    Yusoff, A.R.B.M. ; Song, Yuning ; Schulz, Dirk ; Holz, E. ; Shuib, S.A.

  • Author_Institution
    Dept. de Fis., Univ. Fed. do Parana, Paraná, Brazil
  • Volume
    58
  • Issue
    10
  • fYear
    2011
  • Firstpage
    3594
  • Lastpage
    3598
  • Abstract
    We have studied the effects of the fullerene C70 on the device performance of a composite-emitter multilayer metal-base transistor (MBT). It is shown that the higher molecular weight leads to high common-emitter current gain β of over 252 in a wide range of collector-emitter voltage. By selecting an appropriate maximum and minimum base current IB, an on-to-off current ratio 4.73 × 106 is achieved. This is a substantial improvement over an identical MBT employing C60 having β = 8 and on-to-off current ratio 4.25.
  • Keywords
    bipolar transistors; fullerene devices; collector-emitter voltage; composite-emitter multilayer metal-base transistor; multilayer n-type organic metal-base transistor; on-to-off current ratio; Current measurement; Integrated circuits; Leakage current; Magnetic devices; Magnetic multilayers; Temperature measurement; Transistors; Bipolar transistor; fullerene; metal-base transistor (MBT);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2011.2162733
  • Filename
    5991942
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1302027