DocumentCode
1302185
Title
Thermal stability of IGBT high-frequency operation
Author
Sheng, Kuang ; Finney, Stephen J. ; Williams, Barry W.
Author_Institution
Dept. of Comput. & Electr. Eng., Heriot-Watt Univ., Edinburgh, UK
Volume
47
Issue
1
fYear
2000
fDate
2/1/2000 12:00:00 AM
Firstpage
9
Lastpage
16
Abstract
Thermal stability of high-frequency insulated gate bipolar transistor (IGBT) operation is studied in this paper. The nonpunch-through IGBT is found to be stable when operated within its rated temperature. Thermal runaway occurs with punch-through IGBTs at temperatures below the maximum junction temperature when operated at high frequency at well below rated current, with snubber or soft-switching circuits
Keywords
insulated gate bipolar transistors; snubbers; switching circuits; thermal analysis; thermal stability; IGBT high-frequency operation; high frequency operation; high-frequency insulated gate bipolar transistor; maximum junction temperature; nonpunch-through IGBT; punch-through IGBT; snubber circuits; soft-switching circuits; thermal runaway; thermal stability; Charge carrier processes; Frequency; Insulated gate bipolar transistors; Power semiconductor switches; Snubbers; Switching loss; Temperature; Thermal engineering; Thermal stability; Voltage;
fLanguage
English
Journal_Title
Industrial Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0278-0046
Type
jour
DOI
10.1109/41.824018
Filename
824018
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