• DocumentCode
    1302190
  • Title

    Layout-Aware Multi-Cell Upsets Effects Analysis on TMR Circuits Implemented on SRAM-Based FPGAs

  • Author

    Sterpone, Luca ; Violante, Massimo ; Panariti, Alessandro ; Bocquillon, A. ; Miller, Florent ; Buard, Nadine ; Manuzzato, Andrea ; Gerardin, Simone ; Paccagnella, Alessandro

  • Author_Institution
    Politec. di Torino, Torino, Italy
  • Volume
    58
  • Issue
    5
  • fYear
    2011
  • Firstpage
    2325
  • Lastpage
    2332
  • Abstract
    Multiple Cell Upsets (MCUs) are becoming a growing concern with the advent of the newest FPGA devices. In this paper we present a methodology suitable for analyzing the sensitivity of circuits implemented in SRAM-based FPGAs, and adopting the TMR mitigation scheme. Data about the layout of the adopted FPGA are obtained by means of laser testing. Then static analysis algorithm uses the collected data to predict the impact of MCUs on designs implemented on SRAM-based FPGAs. Thanks to this approach MCUs affecting physically adjacent cells are considered, only. We report data focusing on a Virtex-II device, showing the capabilities of the proposed method.
  • Keywords
    SRAM chips; field programmable gate arrays; SRAM-based FPGA; TMR circuits; TMR mitigation scheme; Virtex-II device; laser testing; layout-aware multicell upsets effect analysis; static analysis algorithm; triple modular redundancy; Computer architecture; Field programmable gate arrays; Laser theory; Microprocessors; Random access memory; Testing; Tunneling magnetoresistance; Analytical analysis; FPGA; TMR; multiple cell upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2161887
  • Filename
    5991971