GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes

Author

Larson, Michael C. ; Kondow, M. ; Kitatani, T. ; Nakahara, Kouji ; Tamura, K. ; Inoue, H. ; Uomi, K.

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

Volume

10

Issue

2

fYear

1998

Firstpage

188

Lastpage

190

Abstract

Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 μm, threshold current density of 3.1 kA/cm², slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-μm-diameter devices. Laser oscillation is observed for temperatures at high as 95/spl deg/C.

Keywords

III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; 1.18 mum; 45 mum; 5 mW; 95 degC; GaAs; GaAs substrate; GaInNAs-GaAs; GaInNAs-GaAs quantum-well active layers; laser oscillation; long-wavelength vertical-cavity surface-emitting laser diodes; output power; room-temperature pulsed operation; slope efficiency; threshold current density; Diode lasers; Fiber lasers; Gallium arsenide; Optical interconnections; Optical surface waves; Power generation; Semiconductor lasers; Substrates; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.655353

Filename

655353