DocumentCode
1302269
Title
Modeling the reverse base current phenomenon due to avalanche effect in advanced bipolar transistors
Author
Liou, J.J. ; Yuan, J.S.
Author_Institution
Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA
Volume
37
Issue
10
fYear
1990
fDate
10/1/1990 12:00:00 AM
Firstpage
2274
Lastpage
2276
Abstract
A model of reverse base current characteristics which is based on device physics is presented. The model requires only physical parameters, thus allowing circuit designers to estimate the device performance under avalanche operation prior to the actual device fabrication. Previously reported experimental data are included in support of the model
Keywords
bipolar transistors; semiconductor device models; advanced bipolar transistors; avalanche effect; avalanche operation; device performance; device physics; model; physical parameters; reverse base current characteristics; reverse base current phenomenon; Bipolar transistors; Capacitance; Carbon capture and storage; Circuits; Degradation; Delay; Electron devices; Isolation technology; Numerical simulation; Semiconductor process modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.59921
Filename
59921
Link To Document