Design and Simulation of Two-Dimensional Superlattice Steep Transistors

Author

Pengyu Long ; Povolotskyi, Michael ; Novakovic, B. ; Kubis, Tillmann ; Klimeck, Gerhard ; Rodwell, Mark J. W.

Author_Institution

Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1212

Lastpage

1214

Abstract

We report design of double-gate metal-oxide-semiconductor field-effect-transistors having InGaAs/InAlAs superlattices between the N+ source and a planar InGaAs channel. As with nanowire superlattice transistors, the 2-D superlattice bandgap reduces injection into the channel of electrons having energy above the source Fermi energy. Simulated ballistic transport characteristics of FETs using a three-well superlattice show 29-37.5-mV/decade minimum subthreshold swing and 390-A/m ON-current given 0.1-A/m OFF-current and a 0.2 V power supply.

Keywords

III-V semiconductors; MOSFET; aluminium compounds; gallium arsenide; indium compounds; semiconductor superlattices; Fermi energy; InGaAs-InAlAs; double gate metal oxide semiconductor field effect transistors; nanowire superlattice transistors; two dimensional superlattice steep transistors; voltage 0.2 V; Ballistic transport; Indium gallium arsenide; MOS devices; MOSFET; Superlattices; MOS devices; MOSFETs;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2364593

Filename

6936895