• DocumentCode
    1302881
  • Title

    Heterojunction bipolar transistor utilising AlGaSb/GaSb alloy system

  • Author

    Furukawa, A. ; Mizuta, M.

  • Author_Institution
    NEC Corp., Kanagawa
  • Volume
    24
  • Issue
    22
  • fYear
    1988
  • fDate
    10/27/1988 12:00:00 AM
  • Firstpage
    1378
  • Lastpage
    1380
  • Abstract
    A heterojunction bipolar transistor (HBT) has been fabricated using the AlGaSb/GaSb material system for the first time. The HBT structure of 100×100 μm2 emitter size was made by mesa-etching the molecular-beam-epitaxially grown layers. The device exhibits a current gain as high as 160 at room temperature
  • Keywords
    III-V semiconductors; aluminium compounds; etching; gallium compounds; heterojunction bipolar transistors; molecular beam epitaxial growth; solid-state microwave devices; AlGaSb-GaSb alloy system; HBT; III-V semiconductors; MBE; heterojunction bipolar transistor; mesa-etching; microwave device; molecular-beam-epitaxially grown layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    82451
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1302881