Title :
Investigation of Multilayer Subwavelength Metallic-Dielectric Stratified Structures
Author :
He, Xiao Yong ; Wang, Qi Jie ; Yu, Siu Fung
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
We investigate dispersion properties of n-layers unit cell metallic-dielectric stratified structures (MDSSs) for the first time to our knowledge. An efficient and flexible numerical method is applied to study optical characteristics of the MDSSs. As an example, we systematically investigate the influences of geometric parameters, operating frequency, and gain material on the dispersion properties of the n-layers unit cell MDSSs in the terahertz regime. The results show that the effective index of the n-layers unit cell MDSSs decreases with the increase of operating frequency. The full-width-half-maximum of the transmittance of the n-layers unit cell MDSSs can be designed wider than that of the binary unit cell MDSSs, which is beneficial for the design of certain optical devices, such as superlenses. Furthermore, the effective index/loss of the proposed structure increases/decreases with the increase of the material gain. Due to the high flexibility of the proposed n-layers unit cell MDSSs, we believe they would have broad applications in the fields of nanophotonics and integrated optoelectronics.
Keywords :
inhomogeneous media; metamaterials; numerical analysis; optical design techniques; optical dispersion; optical losses; optical multilayers; terahertz wave spectra; binary unit cell MDSS; dispersion properties; effective index; effective loss; full-width-half-maximum; gain material; geometrical parameters; integrated optoelectronics; multilayer subwavelength metallic-dielectric stratified structures; n-layers unit cell MDSS; nanophotonics; numerical method; operating frequency; optical characteristics; terahertz wave; transmittance; Dielectric constant; Dispersion; Filling; Indexes; Silicon; Metamaterils; plasmonics; terahertz;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2219504