Title :
Electron velocity enhancement by planar-doped barrier source in GaAs vertical FET
Author :
Yamasaki, Kazuhiko ; Daniels-Race, T. ; Wendt, J.R. ; Schaff, W.J. ; Tasker, P.J. ; Eastman, L.F.
Author_Institution :
Cornell Univ., Ithaca, NY
fDate :
10/27/1988 12:00:00 AM
Abstract :
Experimental evidence of electron velocity enhancement by hot-electron injection into the channel of a GaAs vertical FET has been obtained for the first time. The maximum transconductance and the average electron velocity are 234 mS/mm and 6.4×107 cm/s respectively, which are 1.4 and 1.9 times as large as those of a conventional vertical FET
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; hot carriers; 234 mS; GaAs; III-V semiconductors; VFET; electron velocity enhancement; hot-electron injection; planar-doped barrier source; transconductance; vertical FET;
Journal_Title :
Electronics Letters
