DocumentCode
1303000
Title
Aging characteristics of AlGaAs/GaAs DFB lasers with a window structure
Author
Hirata, Jiro ; Narui, H. ; Mori, Yojiro ; Kaneko, Kunihiko
Author_Institution
Sony Corp. Res. Center, Yokohama
Volume
24
Issue
22
fYear
1988
fDate
10/27/1988 12:00:00 AM
Firstpage
1387
Lastpage
1389
Abstract
A spectrum-monitored aging test of AlGaAs/GaAs DFB lasers with a window structure has been performed at 50°C under 5 mW output power for 3000 h. The results show a significant improvement in the reliability of the lasers. The mean increasing rate of the driving current was about 4.2% and 83% of the devices maintained stable, single-mode oscillation
Keywords
III-V semiconductors; ageing; aluminium compounds; distributed feedback lasers; gallium arsenide; laser modes; life testing; optical testing; reliability; semiconductor device testing; semiconductor junction lasers; 3000 hr; 5 mW; 50 degC; AlGaAs-GaAs; DFB lasers; III-V semiconductors; driving current; reliability improvement; rib waveguide; semiconductor lasers; single-mode oscillation; spectrum-monitored aging test; window structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
82457
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