DocumentCode
1303051
Title
Dopant distribution profile to improve performance of superlattice tunnel diode
Author
Davies, R.A. ; Kelly, Michael J. ; Kerr, T.M.
Author_Institution
GEC Res. Centre, Wembley
Volume
24
Issue
22
fYear
1988
fDate
10/27/1988 12:00:00 AM
Firstpage
1390
Lastpage
1392
Abstract
The authors show how it is possible by careful choice of the dopant profile to improve the performance of a superlattice tunnel diode to give negative differential conductance with good current and voltage swings and a low capacitance
Keywords
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; impurity distribution; negative resistance; semiconductor doping; semiconductor superlattices; tunnel diodes; GaAs-AlGaAs; III-V semiconductors; distribution profile; dopant profile; low capacitance; negative differential conductance; superlattice tunnel diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
82459
Link To Document