Title :
Reactive ion etched InP/GaInAs multiple quantum well rib waveguides grown by solid source MBE
Author :
Roberts, David A. ; Pate, M.A. ; Claxton, P.A.
Author_Institution :
Sheffield Univ.
fDate :
10/27/1988 12:00:00 AM
Abstract :
Using InP/GaInAs MQW material, grown by solid source MBE, rib waveguides have been fabricated by reactive ion etching in a methane/hydrogen plasma. Single mode propagation losses were found to be as low as 1.4 dB/cm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical losses; optical waveguides; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; sputter etching; 1.4 dB; III-V semiconductors; InP-GaInAs; MQW material; epitaxial growth; methane/H plasma; multiple quantum well; optical waveguide fabrication; reactive ion etching; rib waveguides; single mode propagation losses; solid source MBE;
Journal_Title :
Electronics Letters
