DocumentCode :
1303304
Title :
Parametric Mismatch Characterization for Mixed-Signal Technologies
Author :
Tuinhout, Hans ; Wils, Nicole ; Andricciola, Pietro
Author_Institution :
Central R&D, NXP Semicond., Eindhoven, Netherlands
Volume :
45
Issue :
9
fYear :
2010
Firstpage :
1687
Lastpage :
1696
Abstract :
Systematic and random parametric mismatches are major performance limiters as well as notorious causes for redesigns of high precision mixed-signal circuits and systems. Therefore, it is extremely important to measure, analyze, interpret, model and document parametric mismatch mechanisms meticulously for mixed-signal technologies. This paper gives an overview of the main requirements and techniques for mismatch characterization of active and passive devices in deep submicron mixed-signal IC technologies.
Keywords :
integrated circuit measurement; integrated circuit modelling; mixed analogue-digital integrated circuits; active devices; deep submicron mixed-signal IC technology; document parametric mismatch mechanisms; high precision mixed-signal circuit redesign; passive devices; random parametric mismatch characterization; Current measurement; Integrated circuits; Layout; Performance evaluation; Semiconductor device measurement; Systematics; Transistors; Device modeling; matching; mismatch; random parametric mismatch fluctuations; silicon device characterization; systematic mismatch;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2051478
Filename :
5556420
Link To Document :
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