DocumentCode :
1303327
Title :
An Integrated ISFETs Instrumentation System in Standard CMOS Technology
Author :
Chan, Wai Pan ; Premanode, Bhusana ; Toumazou, Christofer
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll. London, London, UK
Volume :
45
Issue :
9
fYear :
2010
Firstpage :
1923
Lastpage :
1934
Abstract :
This paper describes an integrated ISFETs instrumentation system in a 0.18 μm 1-poly-6-metal CMOS process. The chip is able to compute the average of CMOS ISFETs´ threshold voltages by using an averaging array employing global negative current feedback. In addition, neither reference voltage nor current is required to set up the sigma-delta modulator because the internal signal is converted and processed in the frequency domain. The chip operates at 3.3 V for the analog blocks and the digital input/output blocks, and at 1.8 V for the core digital logic. It achieves 8 bits accuracy under 80 μW static power consumption. The die area is 2.6 mm2.
Keywords :
CMOS integrated circuits; ion sensitive field effect transistors; power consumption; sigma-delta modulation; analog blocks; averaging array; chip organization; die area; digital input/output blocks; digital logic; integrated ISFET instrumentation system; internal signal; l-poly-6-metal CMOS process; negative current feedback; power 80 muW; sigma-delta modulator; size 0.18 mum; static power consumption; threshold voltage; voltage 1.8 V; voltage 3.3 V; Arrays; CMOS integrated circuits; Electric potential; Frequency modulation; Logic gates; Threshold voltage; Averaging; CMOS ISFET; ISFET; ISFETs array; VCO; current feedback; current feedback opamp; frequency modulator; log domain; sigma-delta modulator;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2010.2053863
Filename :
5556425
Link To Document :
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