DocumentCode
1303387
Title
Scalable High-CW-Power High-Speed 980-nm VCSEL Arrays
Author
Safaisini, Rashid ; Joseph, John R. ; Lear, Kevin L.
Author_Institution
Electr. & Comput. Eng. Dept., Colorado State Univ., Fort Collins, CO, USA
Volume
46
Issue
11
fYear
2010
Firstpage
1590
Lastpage
1596
Abstract
Scalable 980-nm oxide-confined vertical-cavity surface-emitting laser (VCSEL) arrays capable of both high output power and high modulation frequency have been fabricated and characterized. DC measurement of an array with 28 elements shows that the array operates at continuous wave (CW) powers over 200 mW at a bias current of 875 mA. AC frequency response and pulse measurements of the array give a maximum 3 dB bandwidth of 7.6 GHz and gain-switched output pulses as short as 60 ps full-width at half-maximum. Uniform current and temperature distributions verified by the radial dependence of bandwidth and wavelength show that copper plating of the array elements and flip-chip bonding provide effective thermal management for the arrays.
Keywords
flip-chip devices; surface emitting lasers; temperature distribution; thermal management (packaging); AC frequency response; DC measurement; VCSEL arrays; bandwidth 7.6 GHz; continuous wave power; current 875 mA; flip-chip bonding; gain-switched output pulses; modulation frequency; pulse measurement; scalable oxide-confined vertical-cavity surface emitting laser; temperature distribution; thermal management; wavelength 980 nm; Arrays; Current measurement; Heating; Semiconductor device measurement; Semiconductor laser arrays; Thermal resistance; Vertical cavity surface emitting lasers; High-power semiconductor lasers; VCSEL arrays; modulation bandwidth; vertical-cavity surface-emitting lasers (VCSELs);
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2010.2053917
Filename
5556436
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