Title :
Resonant tunnelling structures with very thin contact layers using nonalloyed Ge/Pd contacts
Author :
Van Hoof, C. ; Genoe, J. ; Van Hove, M. ; Jansen, Ph. ; Van Rossum, M. ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron. Center, Leuven, Belgium
fDate :
6/7/1990 12:00:00 AM
Abstract :
A resonant tunnelling diode with a 10 nm top contact layer has been fabricated using a nonalloyed Ge/Pd ohmic contact. Resonant tunnelling behaviour is still observed. This metallisation scheme is useful for device applications where ohmic contacts to very thin layers are required.
Keywords :
III-V semiconductors; gallium arsenide; germanium; metallisation; ohmic contacts; palladium; tunnel diodes; tunnelling; Ge-Pd-GaAs; metallisation scheme; nonalloyed Ge/Pd/n-GaAs contacts; ohmic contact; resonant tunnelling diode; very thin contact layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900520
