Very slow charge trapping and release in ion implanted GaAs [MESFETs]

Author

Chiu, Chi-Hsin ; Boroumand, Farhad A. ; Swanson, J. Garth

Author_Institution

Dept. of Electron. Eng., King´´s Coll., London, UK

Volume

47

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

512

Lastpage

516

Abstract

Unusually slow trapping and release of electrons has been observed in ion implanted GaAs with room temperature time constants of the order of 1000 s. Trap filling experiments showed that the capture cross section was temperature dependent with capture being more efficient at lower temperatures. The measured capture cross sections were used to refine the analysis of the emission data to demonstrate the existence of two electron emission processes with activation energies of 0.56 eV and 0.013 eV. The effects appear not to be artefacts due to surface or interface states at the edge of the test structures but are due to states within the bulk of the semiconductor within the implanted region

Keywords

III-V semiconductors; Schottky gate field effect transistors; deep level transient spectroscopy; electron field emission; gallium arsenide; ion implantation; semiconductor device measurement; 0.013 eV; 0.56 eV; GaAs; MESFETs; activation energies; bulk states; capture cross section; electron emission processes; emission data; implanted region; room temperature time constants; slow charge release; slow charge trapping; Electron emission; Electron traps; Energy capture; Energy measurement; Filling; Gallium arsenide; Interface states; Semiconductor device testing; Temperature dependence; Temperature measurement;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.824717

Filename

824717