DocumentCode :
1303664
Title :
Asymmetric Tunnel Field-Effect Transistors as Frequency Multipliers
Author :
Madan, Himanshu ; Saripalli, Vinay ; Liu, Huichu ; Datta, Suman
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Volume :
33
Issue :
11
fYear :
2012
Firstpage :
1547
Lastpage :
1549
Abstract :
This letter proposes a novel application of asymmetric (double-gate) tunnel field-effect transistors (asymmetric TFETs) as a frequency multiplier. Work-function tuning of an asymmetric TFET was used to demonstrate symmetric ambipolar transfer characteristics by TCAD simulation. Unlike the conventional balanced FET-based multiplier, the asymmetric TFET design needs only one transistor for rejecting odd harmonics. Advanced design system simulations are used to compare the performance of an n-type FET and an asymmetric TFET frequency multiplier.
Keywords :
field effect transistors; frequency multipliers; tunnel transistors; TCAD simulation; advanced design system simulations; asymmetric TFET design; asymmetric TFET frequency multiplier; asymmetric tunnel field-effect transistors; balanced FET-based multiplier; double-gate tunnel field-effect transistors; n-type FET; odd harmonic rejection; symmetric ambipolar transfer characteristics; Electron multipliers; FETs; Harmonic analysis; Mixers; Tunneling; Ambipolar TFET; asymmetric TFET; band-to-band tunneling; frequency multiplier; mixer;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2214201
Filename :
6317134
Link To Document :
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