Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs

Author

Horio, Kazushige ; Wakabayashi, Akira ; Yamada, Tomiko

Author_Institution

Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan

Volume

47

Issue

3

fYear

2000

fDate

3/1/2000 12:00:00 AM

Firstpage

617

Lastpage

624

Abstract

Effects of substrate traps on turn-on characteristics of GaAs MESFETs are studied by two dimensional (2-D) simulation. When the off-state gate voltage is much more negative than the threshold (pinch off) voltage and the surface-state effects are small, abnormal current overshoot and subsequent slow transients are observed for the case with undoped semi-insulating substrate including an electron trap: EL2. Even if the surface-state effects are pronounced to show the large gate-lag, the drain current may show the overshoot-like behavior at relatively early periods. The case of Cr-doped substrate with a hole trap: Cr is also discussed

Keywords

III-V semiconductors; Schottky gate field effect transistors; electron traps; gallium arsenide; hole traps; microwave field effect transistors; semiconductor device models; surface states; 2D simulation; GaAs; MESFETs; abnormal current overshoot; electron trap; hole trap; off-state gate voltage; overshoot-like behavior; pinch off voltage; slow transients; substrate-trap effects; surface-state effects; threshold voltage; turn-on characteristics; two-dimensional analysis; undoped semi-insulating substrate; Analog integrated circuits; Digital integrated circuits; Electron traps; Gallium arsenide; MESFETs; Modeling; Surface treatment; Systems engineering and theory; Threshold voltage; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.824738

Filename

824738