• DocumentCode
    1303747
  • Title

    A channel resistance derivative method for effective channel length extraction in LDD MOSFETs

  • Author

    Niu, Guofu ; Cressler, John D. ; Mathew, Suraj J. ; Subbanna, Seshu

  • Author_Institution
    Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    3/1/2000 12:00:00 AM
  • Firstpage
    648
  • Lastpage
    650
  • Abstract
    A channel resistance derivative method for extracting the electrical effective channel length and series resistance is proposed, and demonstrated on an advanced 0.35 μm LDD CMOS technology. A clear graphic image of the LEFF and RSD is obtained directly from the measured channel resistance and its derivative with respect to the gate bias. The method also provides guidelines for the proper gate bias range selection in traditional LEFF extraction techniques
  • Keywords
    CMOS integrated circuits; MOSFET; semiconductor device models; CMOS technology; LDD MOSFET; channel resistance derivative method; effective channel length extraction; gate bias; series resistance; CMOS technology; Electric resistance; Electric variables; Electrical resistance measurement; Graphics; Guidelines; MOSFET circuits; Microelectronics; Optimization methods; Parameter extraction;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.824743
  • Filename
    824743
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1303747