• DocumentCode
    1303761
  • Title

    Enhanced corrugated QWIP performance using dielectric coverage

  • Author

    Das, N.C. ; Choi, K.K.

  • Author_Institution
    Raytheon/STX, Lanham, MD, USA
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    3/1/2000 12:00:00 AM
  • Firstpage
    653
  • Lastpage
    655
  • Abstract
    We report here the effect of dielectric/metal coverage on the performance of the corrugated quantum well infrared photodetectors (C-QWIP) in two wavelength regimes. We found that with proper dielectrics, both the detector dark current and the spectral responsivity can he improved upon the monitoring 45° edge coupled QWIP. In the 8 μm regime, the normalized responsivity of a Si3 N4 covered C-QWIP was found to be improved by 3.3 times. In the 14 μm regime, the improvement is a factor of 1.8 using Si3N4 coverage and a factor of 2.5 using SiO2 coverage
  • Keywords
    dark conductivity; infrared detectors; photodetectors; quantum well devices; Si3N4; SiO2; corrugated quantum well infrared photodetectors; dark current; dielectric/metal coverage; spectral responsivity; Chemicals; Dark current; Detectors; Dielectric substrates; Dielectrics and electrical insulation; Etching; Face detection; Gallium arsenide; Optical reflection; Photodetectors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.824745
  • Filename
    824745