DocumentCode :
1303761
Title :
Enhanced corrugated QWIP performance using dielectric coverage
Author :
Das, N.C. ; Choi, K.K.
Author_Institution :
Raytheon/STX, Lanham, MD, USA
Volume :
47
Issue :
3
fYear :
2000
fDate :
3/1/2000 12:00:00 AM
Firstpage :
653
Lastpage :
655
Abstract :
We report here the effect of dielectric/metal coverage on the performance of the corrugated quantum well infrared photodetectors (C-QWIP) in two wavelength regimes. We found that with proper dielectrics, both the detector dark current and the spectral responsivity can he improved upon the monitoring 45° edge coupled QWIP. In the 8 μm regime, the normalized responsivity of a Si3 N4 covered C-QWIP was found to be improved by 3.3 times. In the 14 μm regime, the improvement is a factor of 1.8 using Si3N4 coverage and a factor of 2.5 using SiO2 coverage
Keywords :
dark conductivity; infrared detectors; photodetectors; quantum well devices; Si3N4; SiO2; corrugated quantum well infrared photodetectors; dark current; dielectric/metal coverage; spectral responsivity; Chemicals; Dark current; Detectors; Dielectric substrates; Dielectrics and electrical insulation; Etching; Face detection; Gallium arsenide; Optical reflection; Photodetectors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.824745
Filename :
824745
Link To Document :
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