Title :
94 GHz InP MMIC five-section distributed amplifier
Author :
Majidi-Ahy, R. ; Riaziat, M. ; Nishimoto, C. ; Glenn, M. ; Silverman, Scott ; Weng, Shijie ; Pao, Y.C. ; Zdasiuk, G. ; Bandy, S. ; Tan, Zhenyu
Author_Institution :
Device Lab., Varian Res. Center, Palo Alto, CA, USA
Abstract :
A single-stage 94 GHz InP MMIC amplifier with 6.4 dB gain at 94 GHz has been developed, which is the highest-frequency MMIC amplifier reported to date. Lattice-matched GaInAs/AlInAs HEMTs with 0.1 mu m mushroom gates were the active devices. The CPW MMIC chip dimensions are 500 mu m*670 mu m.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit technology; microwave amplifiers; waveguides; 0.1 micron; 500 to 670 micron; 6.4 dB; 94 GHz; CPW MMIC chip; EHF; GaInAs-AlInAs; HEMTs; InP; MIMIC; MM-wave; MMIC amplifier; W-band; dimensions; five-section distributed amplifier; gain; millimetre-wave; mushroom gates; semiconductors; single stage amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900061
