DocumentCode
1303902
Title
94 GHz InP MMIC five-section distributed amplifier
Author
Majidi-Ahy, R. ; Riaziat, M. ; Nishimoto, C. ; Glenn, M. ; Silverman, Scott ; Weng, Shijie ; Pao, Y.C. ; Zdasiuk, G. ; Bandy, S. ; Tan, Zhenyu
Author_Institution
Device Lab., Varian Res. Center, Palo Alto, CA, USA
Volume
26
Issue
2
fYear
1990
Firstpage
91
Lastpage
92
Abstract
A single-stage 94 GHz InP MMIC amplifier with 6.4 dB gain at 94 GHz has been developed, which is the highest-frequency MMIC amplifier reported to date. Lattice-matched GaInAs/AlInAs HEMTs with 0.1 mu m mushroom gates were the active devices. The CPW MMIC chip dimensions are 500 mu m*670 mu m.
Keywords
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; integrated circuit technology; microwave amplifiers; waveguides; 0.1 micron; 500 to 670 micron; 6.4 dB; 94 GHz; CPW MMIC chip; EHF; GaInAs-AlInAs; HEMTs; InP; MIMIC; MM-wave; MMIC amplifier; W-band; dimensions; five-section distributed amplifier; gain; millimetre-wave; mushroom gates; semiconductors; single stage amplifier;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900061
Filename
82477
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