Increase of the Reliability of the Junction Terminations of Reverse-Conducting Insulated Gate Bipolar Transistor by Appropriate Backside Layout Design

Author

Wenliang Zhang ; Yangjun Zhu ; Shuojin Lu ; Xiaoli Tian ; Yuan Teng

Author_Institution

Dept. of Silicon Devices & Integrated Technol., Inst. of Microelectron., Beijing, China

Volume

35

Issue

12

fYear

2014

fDate

Dec. 2014

Firstpage

1281

Lastpage

1283

Abstract

In this letter, a novel design concept for the edge termination of reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed and evaluated. The new design can be easily realized by backside layout design without additional processes and manufacturing cost. Simulation results show that the proposed method can reduce the total amount of injected holes by 94.6% and 81.5% in the insulated gate bipolar transistor (IGBT) and diode modes, respectively. Thus, the current crowding problem in the edge termination when RC-IGBT device turns OFF in IGBT mode or recovers in diode mode is suppressed.

Keywords

insulated gate bipolar transistors; integrated circuit layout; power bipolar transistors; power field effect transistors; power integrated circuits; semiconductor device reliability; backside layout design; design concept; edge termination; insulated gate bipolar transistor; junction termination reliability; reverse conducting IGBT; Charge carrier density; Current density; Insulated gate bipolar transistors; Reliability; Robustness; Current crowding; current crowding; edge termination; reliability; reverse-conducting insulated gate bipolar transistor (RC-IGBT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2364301

Filename

6936896