• DocumentCode
    1304107
  • Title

    Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector

  • Author

    Jinrong Yuan ; Baile Chen ; Holmes, Archie L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
  • Volume
    48
  • Issue
    19
  • fYear
    2012
  • Firstpage
    1230
  • Lastpage
    1232
  • Abstract
    The quantum efficiency of an InGaAs/InP photodetector has increased from 50 to 70.2% at %%1550%nm by applying a Ti/Au reflector with a SiO2 phase-matched-layer at the back of the device. The ultra-broadband mirror has a simple fabrication process and promising reflectivity (97.9% for the reference and 79% for the InGaAs/InP photodetector). These results are comparable to the other more commonly used high-reflectivity mirrors.
  • Keywords
    III-V semiconductors; gallium arsenide; gold; indium compounds; mirrors; optical elements; optical fabrication; photodetectors; reflectivity; silicon compounds; titanium; InGaAs-InP; Ti-Au-SiO2; fabrication process; phase matched layer reflector; photodetectors; quantum efficiency improvement; reflectivity; ultra broadband mirror;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.0806
  • Filename
    6317255
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1304107