Title :
Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector
Author :
Jinrong Yuan ; Baile Chen ; Holmes, Archie L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Virginia, Charlottesville, VA, USA
Abstract :
The quantum efficiency of an InGaAs/InP photodetector has increased from 50 to 70.2% at %%1550%nm by applying a Ti/Au reflector with a SiO2 phase-matched-layer at the back of the device. The ultra-broadband mirror has a simple fabrication process and promising reflectivity (97.9% for the reference and 79% for the InGaAs/InP photodetector). These results are comparable to the other more commonly used high-reflectivity mirrors.
Keywords :
III-V semiconductors; gallium arsenide; gold; indium compounds; mirrors; optical elements; optical fabrication; photodetectors; reflectivity; silicon compounds; titanium; InGaAs-InP; Ti-Au-SiO2; fabrication process; phase matched layer reflector; photodetectors; quantum efficiency improvement; reflectivity; ultra broadband mirror;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.0806
