• DocumentCode
    1304271
  • Title

    High efficiency, high uniformity, grating coupled surface emitting lasers

  • Author

    Parke, R. ; Waarts, R. ; Welch, D.F. ; Hardy, A. ; Streifer, W.

  • Author_Institution
    Spectra Diode Labs., San Jose, LA, USA
  • Volume
    26
  • Issue
    2
  • fYear
    1990
  • Firstpage
    125
  • Lastpage
    127
  • Abstract
    GaAs-AlGaAs grating coupled surface emitting lasers are fabricated with superlattice reflectors on the substrate side to increase the output coupling from the second order grating. Differential efficiencies of 60% are achieved with high uniformity over the wafer surface. Spectral uniformity across a 1 cm wafer is better than 0.4 nm while the far field radiation angle from the individual gratings are within 0.02 degrees of the normal. The high uniformity and good lasing characteristics are critical to the coherent coupling of an array of surface emitting devices.
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; integrated optics; optical communication equipment; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 2D semiconductor laser arrays; 60 percent; GaAs-AlGaAs; VPE; coherent coupling; epitaxial semiconductor growth; grating coupled; high uniformity; metallorganic CVD; second order grating; superlattice reflectors; surface emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900086
  • Filename
    82501