Investigation of Loading Effect on Power Performance for Planar Gunn Diodes Using Load-Pull Measurement Technique

Author

Chong Li ; Lok, L.B. ; Khalid, Amir ; Thayne, I.G. ; Cumming, David R. S.

Author_Institution

Sch. of Eng., Univ. of Glasgow, Glasgow, UK

Volume

21

Issue

10

fYear

2011

Firstpage

556

Lastpage

558

Abstract

A one-port load-pull measurement has been carried out in order to investigate the effect of loading on the RF power performance of a planar Gunn diode operating in the transit-time mode at 102 GHz. A W-band manual E-H tuner was applied between a waveguide mixer and a wafer probe to vary the load impedance on the Gunn diode. It has been found that more than 25 dB variation of output power was obtained by systematically adjusting the tuner. By de-embedding the S-parameters of the probe, E-H tuner and mixer, the relationship between RF power and load impedance for the planar Gunn diode was derived. This method is extremely useful for assisting the design of matching networks to improve power output of one-port oscillator devices.

Keywords

Gunn diodes; S-parameters; impedance matching; measurement systems; mixers (circuits); oscillators; tuning; voltage measurement; waveguides; E-H tuner; RF power performance; W-band manual; frequency 102 GHz; loading effect; one-port load-pull measurement; one-port oscillator device; planar Gunn diode; power performance; transit-time mode; wafer probe; waveguide mixer; Impedance; Mixers; Oscillators; Probes; Radio frequency; Scattering parameters; Tuners; Gunn devices; S-parameters; impedance matching; load-pull measurement;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2011.2163496

Filename

5995124