DocumentCode
1304388
Title
Low-pressure photochemical vapour deposition of silicon dioxide on InP substrates
Author
Nissim, Y.I. ; Regolini, J.L. ; Bensahel, D. ; Licoppe, C.
Author_Institution
CNET, Lab. de Bagneux, France
Volume
24
Issue
8
fYear
1988
fDate
4/14/1988 12:00:00 AM
Firstpage
488
Lastpage
489
Abstract
Silicon dioxide films deposited on InP substrates are obtained from a mixture of silane and oxygen gases irradiated with a UV lamp. Deposition rates compatible with industrial processes are obtained for substrate temperatures well below the degradation threshold of InP. Optical and electrical characterisations are performed for InP MISFET applications
Keywords
CVD coatings; III-V semiconductors; chemical vapour deposition; electronic conduction in insulating thin films; indium compounds; infrared spectra of inorganic solids; insulated gate field effect transistors; insulating thin films; optical properties of substances; semiconductor technology; silicon compounds; substrates; CVD; III-V semiconductors; IR absorption spectrum; InP substrates; MISFET applications; SiO2-InP; UV lamp irradiation; electrical characterisations; low-pressure; photochemical vapour deposition; photodeposition rate; substrate temperatures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
8252
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