• DocumentCode
    1304408
  • Title

    Deep level transient spectroscopy of n-AlGaAs/GaAs high electron mobility transistors

  • Author

    Goostray, J. ; Thomas, Holly ; Morgan, D.V. ; Kohn, Erhard ; Christou, Alex ; Mottet, Serge

  • Author_Institution
    Univ. of Wales Coll. of Cardiff, UK
  • Volume
    26
  • Issue
    3
  • fYear
    1990
  • Firstpage
    159
  • Lastpage
    160
  • Abstract
    Deep level transient spectroscopy has been used to characterise the traps found in MBE grown n-AlGaAs/GaAs HEMTs. In addition to DX centres two further traps common to different HEMT structures are reported. The authors have identified an electron trap (Ea=0.6 eV) distributed nonuniformly in the AlGaAs donor layer, and an interface state trap (Ea=0.55 eV) located close to the two dimensional electron gas.
  • Keywords
    III-V semiconductors; aluminium compounds; deep level transient spectroscopy; gallium arsenide; high electron mobility transistors; molecular beam epitaxial growth; semiconductor device models; semiconductor epitaxial layers; AlGaAs donor layer; AlGaAs-GaAs; DLTS; DX centres; HEMTs; MBE grown; deep level transient spectroscopy; electron trap; high electron mobility transistors; interface state trap; n-AlGaAs/GaAs; semiconductors; trap characterisation; two dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900108
  • Filename
    82526
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1304408